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| APT100GF60JR 600V 100A E C Fast IGBT The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage. E G SO ISOTOP (R) 2 T- 27 * Low Forward Voltage Drop * Low Tail Current * Avalanche Rated * High Freq. Switching to 20KHz * Ultra Low Leakage Current * RBSOA and SCSOA Rated "UL Recognized" C G E MAXIMUM RATINGS Symbol VCES VCGR VGE I C1 I C2 I CM I LM EAS PD TJ,TSTG TL Parameter Collector-Emitter Voltage All Ratings: TC = 25C unless otherwise specified. APT100GF60JR UNIT Collector-Gate Voltage (RGE = 20KW) Gate-Emitter Voltage Continuous Collector Current Continuous Collector Current @ TC = 60C Pulsed Collector Current 1 RBSOA Clamped Inductive Load Current @ Rg = 11W TC = 125C Single Pulse Avalanche Energy Total Power Dissipation 2 Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. AL IC HN EC ION TT CE MA AN OR DV NF A I 600 20 100 100 280 200 85 4 600 Volts @ TC = 25C Amps @ TC = 25C mJ Watts C 500 -55 to 150 300 STATIC ELECTRICAL CHARACTERISTICS Symbol BVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 1.0mA) Gate Threshold Voltage (VCE = VGE, I C = 700A, Tj = 25C) MIN TYP MAX UNIT 600 4.5 5.5 2.2 2.8 6.5 2.7 3.4 1.0 5.0 100 nA 052-6261 Rev - 5-2001 Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 125C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125C) Gate-Emitter Leakage Current (VGE = 20V, VCE = 0V) Volts I CES I GES mA CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com USA EUROPE 405 S.W. Columbia Street Chemin de Magret Bend, Oregon 97702 -1035 F-33700 Merignac - France Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15 FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61 DYNAMIC CHARACTERISTICS Symbol Cies Coes Cres Qg Qge Qgc td(on) tr td(off) tf td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets gfe Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT100GF60JR Test Conditions Capacitance VGE = 0V VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCC = 0.5VCES I C = I C2 Resistive Switching (25C) VGE = 15V I C = I C2 VCC = 0.66VCES RG = 10W MIN TYP MAX UNIT 4400 480 300 335 40 195 50 nC pF Gate-Emitter Charge Gate-Collector ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Total Switching Losses Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Switching Losses AL IC HN EC ION TT CE MA AN OR DV NF A I 200 190 270 50 Inductive Switching (150C) VCLAMP(Peak) = 0.66VCES VGE = 15V I C = I C2 R G = 10W ns 170 400 95 ns 6.3 5.2 TJ = +150C mJ 11.5 Inductive Switching (25C) VCLAMP(Peak) = 0.66VCES VGE = 15V I C = I C2 R G = 10W TJ = +25C VCE = 20V, I C = I C2 55 180 365 90 10.5 6 mJ S ns Forward Transconductance THERMAL AND MECHANICAL CHARACTERISTICS Symbol RQJC RQJA WT Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT C/W 0.32 40 1.03 oz gm Package Weight 29.2 10 lb*in N*m Torque 052-6261 Rev - 5-2001 Mounting Torque (using a 6-32 or 3mm Binding Head Machine Screw) 1.5 1 2 3 Repetitive Rating: Pulse width limited by maximum junction temperature. IC = IC2, RGE = 25W, L = 17H, Tj = 25C See MIL-STD-750 Method 3471 APT Reserves the right to change, without notice, the specifications and information contained herein. APT100GF60JR AL IC HN EC ION TT CE MA AN OR DV NF A I 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 1.95 (.077) 2.14 (.084) * Emitter Collector * Emitter terminals are shorted internally. Current handling capability is equal for either Source terminal. 052-6261 Rev - 5-2001 38.0 (1.496) 38.2 (1.504) * Emitter Dimensions in Millimeters and (Inches) Gate APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058 |
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